inchange semiconductor isc product specification isc silicon npn power transistor 2SD1850 description high voltage high switching speed wide area of safe operation applications designed for horizontal deflect ion output applications. absolute maximum ratings (t a =25 ) symbol parameter value unit v cbo collector-base voltage 1500 v v ces collector-emitter voltage 1500 v v ceo collector-emitter voltage 700 v v ebo emitter-base voltage 7 v i c collector current-continuous 7 a i cp collector current-peak 20 a i b b base current- continuous 3 a collector power dissipation @t a =25 3 p c collector power dissipation @t c =25 120 w t j junction temperature 150 t stg storage temperature range -55-150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SD1850 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ max unit v (br)ebo emitter-base breakdown voltage i e = 1ma; i c = 0 7 v v ce( sat ) collector-emitter saturation voltage i c = 6a; i b = 1.5a b 8.0 v v be( sat ) base-emitter saturation voltage i c = 6a; i b = 1.5a b 1.5 v h fe-1 dc current gain i c = 1a; v ce = 5v 5 25 h fe-2 dc current gain i c = 6a; v ce = 5v 4.5 v cb = 1000v; i e = 0 10 a i cbo collector cutoff current v cb = 1500v; i e = 0 1.0 ma f t transition frequency i c = 1a; v ce = 10v 2 mhz switching times, resistive load t s storage time 1.5 s t f fall time i c = 6a; i b1 = 1.5a; i b2 = -3a, v cc = 200v 0.2 s isc website www.iscsemi.cn
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